Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the new TD99102 UltraCMOS ® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip ...
A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
For decades, the semiconductor industry has been laser-focused on shrinking silicon transistors, but Peking University researchers believe the future might lie in changing materials entirely. In a ...
GaN Systems has developed two 650-V half-bridge evaluation cards (30 A and 60 A) to evaluate gallium nitride (GaN) drivers and GaN transistors in a variety of applications. The company claims these ...
Intel unveils 18A-P with Power Boost dual-contact transistors, delivering 9% higher performance, 18% lower power, and ...
MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
Texas Instruments (TI) introduced a seven-channel, NMOS low-side driver, replacing standard Darlington transistor arrays with a power-efficient, drop-in compatible integrated circuit. The TPL7407L ...
The post Samsung is breaking transistor production wide open by going 3D appeared first on Android Headlines.
Solenoids and relays used in electronic control applications consume lots of power. The current required for activation is typically three to 10 times higher than the minimum needed to hold the relay ...
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